PART |
Description |
Maker |
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM 256Mb (2MBank2) Synchronous DRAM 256Mb的(200万?4Bank2)同步DRAM 256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG SMSC, Corp.
|
HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
IS42SM32100C IS42RM32100C-6BLI |
512K x32Bits x2Banks Low Power Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
|
M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|